Stark effect-dependent of ground-state donor binding energy in InGaN/GaN parabolic QWW
Identifieur interne : 000497 ( Main/Repository ); précédent : 000496; suivant : 000498Stark effect-dependent of ground-state donor binding energy in InGaN/GaN parabolic QWW
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Abstract
Using the finite-difference method within the quasi-one-dimensional effective potential model and effective mass approximation, the ground-state binding energy of hydrogenic shallow-donor impurity in wurtzite (WZ) (In,Ga)N/GaN parabolic transversal-section quantum-well wires (PQWWs) subjected to external electric field is investigated. An effective radius of a cylindrical QWW describing the strength of the lateral confinement is introduced. The results show that (i) the position of the largest electron probability density in x-y plane is located at a point and it is pushed along the negative sense by the electric field directed along the positive sense, (ii) the ground-state binding energy is largest for the impurity located at this point and starts to decrease when the impurity is away from this point, (iii) the ground-state binding energy decreases with increase in the external electric field and effective radius, and (iv) the Stark-shift increases with the increase of the external electric field and the effective radius.
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<author><name sortKey="El Ghazi, Haddou" uniqKey="El Ghazi H">Haddou El Ghazi</name>
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<author><name sortKey="Zorkani, Izeddine" uniqKey="Zorkani I">Izeddine Zorkani</name>
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<author><name sortKey="Jorio, Anouar" uniqKey="Jorio A">Anouar Jorio</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binding energy</term>
<term>Defect states</term>
<term>Donor center</term>
<term>Effective mass model</term>
<term>Effective potential</term>
<term>Finite difference method</term>
<term>Gallium Indium Nitrides Mixed</term>
<term>Gallium nitride</term>
<term>Ground states</term>
<term>H-like ions</term>
<term>Probability density</term>
<term>Quantum wires</term>
<term>Shallow level</term>
<term>Stark effect</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Effet Stark</term>
<term>Etat fondamental</term>
<term>Etat défaut</term>
<term>Energie liaison</term>
<term>Méthode différence finie</term>
<term>Potentiel effectif</term>
<term>Modèle masse effective</term>
<term>Gallium Indium Nitrure Mixte</term>
<term>Densité probabilité</term>
<term>Niveau peu profond</term>
<term>Centre donneur</term>
<term>Nitrure de gallium</term>
<term>Ion hydrogénoïde</term>
<term>Fil quantique</term>
<term>InGaN</term>
<term>GaN</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Using the finite-difference method within the quasi-one-dimensional effective potential model and effective mass approximation, the ground-state binding energy of hydrogenic shallow-donor impurity in wurtzite (WZ) (In,Ga)N/GaN parabolic transversal-section quantum-well wires (PQWWs) subjected to external electric field is investigated. An effective radius of a cylindrical QWW describing the strength of the lateral confinement is introduced. The results show that (i) the position of the largest electron probability density in x-y plane is located at a point and it is pushed along the negative sense by the electric field directed along the positive sense, (ii) the ground-state binding energy is largest for the impurity located at this point and starts to decrease when the impurity is away from this point, (iii) the ground-state binding energy decreases with increase in the external electric field and effective radius, and (iv) the Stark-shift increases with the increase of the external electric field and the effective radius.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Stark effect-dependent of ground-state donor binding energy in InGaN/GaN parabolic QWW</s1>
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<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Using the finite-difference method within the quasi-one-dimensional effective potential model and effective mass approximation, the ground-state binding energy of hydrogenic shallow-donor impurity in wurtzite (WZ) (In,Ga)N/GaN parabolic transversal-section quantum-well wires (PQWWs) subjected to external electric field is investigated. An effective radius of a cylindrical QWW describing the strength of the lateral confinement is introduced. The results show that (i) the position of the largest electron probability density in x-y plane is located at a point and it is pushed along the negative sense by the electric field directed along the positive sense, (ii) the ground-state binding energy is largest for the impurity located at this point and starts to decrease when the impurity is away from this point, (iii) the ground-state binding energy decreases with increase in the external electric field and effective radius, and (iv) the Stark-shift increases with the increase of the external electric field and the effective radius.</s0>
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<s5>05</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>12</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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